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| BC184, b, c transistor (npn) features power dissipation p cm: 0.35 w (tamb=25 ) collector current i cm: 0.1 a collector-base voltage v (br)cbo : 45 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic=10a, i e =0 45 v collector-emitter breakdown voltage v (br)ceo i c = 2ma , i b =0 30 v emitter-base breakdown voltage v (br)ebo i e =100a. i c =0 6 v collector cut-off current i cbo v cb =30v, i e =0 15 na collector cut-off current i ceo v ce =30v, i b =0 0.1 a emitter cut-off current i ebo v eb =4 v, i c =0 15 na dc current gain BC184 BC184b BC184c h fe(1) v ce =5v, i c = 2ma 240 240 450 900 500 900 collector-emitter saturation voltage v ce(sat) i c =100ma, i b = 5ma 0.6 v base-emitter saturation voltage v be(sat) i c = 100ma, i b =5ma 1.2 v transition frequency f t v ce = 5v, i c = 10ma f = 100mhz 150 mhz 1 2 3 to-92 1. collector 2. base 3. emitter b c184-b-c http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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